Monte carlo simulation of focused ion beam lithography in inorganic resists

Summary form only given. The bilayer film of Ag/a-Se/sub 75/Ge/sub 25/ and the monolayer film of a-Se/sub 75/Ge/sub 25/ act as a negative and a positive resist in ion beam lithography, respectively. We have discussed the numerically calculated values such as ion range, ion concentration and ion transmission coefficient, and the defocused Ga/sup +/ ion-induced characteristics in inorganic resists. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N/spl Gt/1000) of simulated trajectories within the resist, the distribution for the range parameters of primary and recoiled ions and the energy dissipation profiles for various ion beam energies are evaluated. Also this text contains the exposure and development results.