Title :
A low phase noise W-band InP-HBT monolithic push-push VCO
Author :
Kobayashi, K.W. ; Cowles, J. ; Tran, L.T. ; Gutierrez-Aitken, A. ; Block, T. ; Yamada, F. ; Oki, A.K. ; Streit, D.C.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
This paper reports on what is believed to be the highest frequency bipolar VCO MMIC so far reported. The W-band VCO is based on a push-push oscillator topology which employs InP-HBTs with f/sub T/´s and f/sub max/´s of 70 and 200 GHz, respectively. The W-band VCO produces a maximum oscillating frequency of 108 GHz and delivers an output power of +0.92 dBm into 50 /spl Omega/. The VCO also obtains a tuning range of 2.73 GHz or 2.6% using a monolithic varactor. A phase noise of -88 dBc/Hz and -109 dBc/Hz is achieved at 1 MHz and 10 MHz offsets, respectively, and is believed to be the lowest phase noise reported for a monolithic W-band VCO. The push-push VCO design approach enables higher VCO frequency operation, lower noise performance, and smaller size which is attractive for MM-wave frequency source applications.
Keywords :
III-V semiconductors; MMIC oscillators; bipolar MIMIC; circuit tuning; heterojunction bipolar transistors; indium compounds; integrated circuit noise; millimetre wave oscillators; phase noise; varactors; voltage-controlled oscillators; 108 GHz; 200 GHz; 70 GHz; EHF; InP; InP-HBT VCO; MM-wave frequency source applications; W-band MMIC; bipolar VCO MIMIC; low phase noise VCO; monolithic push-push VCO; monolithic varactor; push-push oscillator topology; tuning range; Current density; Frequency; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Phase noise; Power generation; Space technology; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722684