Inversion Layer Injection Devices - A New Class of Semiconductor Devices

This paper reports the experimental evidence of a new minority carrier injection mechanism. The new physical mechanism earlier proposed by us is based on the use of a MOS inversion layer as a minority carrier injector as part of a dynamic junction. Unlike in conventional devices, the physical existence of the emitter and the carrier injection of such a junction is entirely controlled by the MOS gate. A new class of semiconductor devices based on inversion layer injection is presented.