Title :
Effects of high temperature on performances and hot-carrier reliability in DC/AC stressed 0.35 um n-MOSFETs
Author :
Bravaix, A. ; Goguenheim, D. ; Revil, N. ; Varrot, M. ; Mortini, P.
Author_Institution :
ISEM, Maison des technologies, France
fDate :
22-24 September 1997
Keywords :
CMOS technology; Degradation; Electron traps; Hot carrier effects; Hot carriers; MOSFET circuits; Microelectronics; Stress; Temperature distribution; Testing;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194496
