Device characterization of semi-insulating GaAs substrate grown by vertical boat method for ion-implantation process

Author

Yanagisawa, M. ; Nakajima, S. ; Sakurada, T. ; Kiyama, M. ; Sawada, S. ; Nakai, R.

Author_Institution

Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan

fYear

1998

fDate

1-4 Nov. 1998

Firstpage

247

Lastpage

250

Abstract

The Vertical Boat (VB) method has an advantage in the manufacture of large diameter GaAs substrates because of the low dislocation density and the small residual strain. The electrical characterization of devices fabricated on VB GaAs substrates have been demonstrated in this work. The VB substrate shows the same or better properties compared with the LEC substrate. We conclude that the VB GaAs substrate is expected to be suitable for the ion-implantation device process with a large diameter.

Keywords

III-V semiconductors; Schottky gate field effect transistors; crystal growth from melt; gallium arsenide; integrated circuit measurement; ion implantation; monolithic integrated circuits; semiconductor device measurement; substrates; GaAs; device characterization; electrical characterization; ion-implantation process; low dislocation density; low residual strain; semiinsulating GaAs substrate; vertical boat method; Annealing; Boats; Capacitive sensors; Conductivity; Costs; Gallium arsenide; MESFETs; Manufacturing processes; Research and development; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual

Conference_Location

Atlanta, GA, USA

ISSN

1064-7775

Print_ISBN

0-7803-5049-9

Type

conf

DOI

10.1109/GAAS.1998.722688

Filename

722688