Title :
Device characterization of semi-insulating GaAs substrate grown by vertical boat method for ion-implantation process
Author :
Yanagisawa, M. ; Nakajima, S. ; Sakurada, T. ; Kiyama, M. ; Sawada, S. ; Nakai, R.
Author_Institution :
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
The Vertical Boat (VB) method has an advantage in the manufacture of large diameter GaAs substrates because of the low dislocation density and the small residual strain. The electrical characterization of devices fabricated on VB GaAs substrates have been demonstrated in this work. The VB substrate shows the same or better properties compared with the LEC substrate. We conclude that the VB GaAs substrate is expected to be suitable for the ion-implantation device process with a large diameter.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; crystal growth from melt; gallium arsenide; integrated circuit measurement; ion implantation; monolithic integrated circuits; semiconductor device measurement; substrates; GaAs; device characterization; electrical characterization; ion-implantation process; low dislocation density; low residual strain; semiinsulating GaAs substrate; vertical boat method; Annealing; Boats; Capacitive sensors; Conductivity; Costs; Gallium arsenide; MESFETs; Manufacturing processes; Research and development; Substrates;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722688
