DocumentCode :
1911559
Title :
Gate bias aging of unhydrogenated polycrystalline silicon TFTs
Author :
Tala-Ighil, B. ; Toutah, A. ; Mohammed-Brahim, T. ; Mourgues, K. ; Raoult, F. ; Lhermite, H. ; Bonnaud, O.
Author_Institution :
Site Universitaire, LUSAC, FRANCE
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
608
Lastpage :
611
Keywords :
Active matrix liquid crystal displays; Aging; Amorphous silicon; Crystalline materials; Plasma applications; Plasma chemistry; Plasma sources; Stress; Thin film transistors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194502
Filename :
1503432
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1911559
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