• DocumentCode
    1911590
  • Title

    Dynamic Compact Thermal Model for stacked-die components

  • Author

    Monier-vinard, Eric ; Dia, Cheikh Tidiane ; Bissuel, Valentin ; Laraqi, Najib ; Daniel, Olivier

  • Author_Institution
    Thales Global Services, Meudon La Forêt, France
  • fYear
    2012
  • fDate
    18-22 March 2012
  • Firstpage
    20
  • Lastpage
    28
  • Abstract
    The present work proposes an approach to generate Dynamic Compact Thermal Models or “DCTMs” dedicated to electronic components. This one is based on the European project DELPHI, which defined the first comprehensive methodology concerning the generation of thermal behavioral model, Boundary Condition Independent, called Compact Thermal Models or “CTMs”. Unfortunately, the scope of “CTMs” was limited to the steady state as well as for single chip packages. But, the latest trend toward higher and higher density packaging using several chips requires henceforth a methodology capable to take into account the transient regime for 3D integration technologies like stacked-die solution. Following the CTM´s modus operandi the DCTMs were conceived to propose a RC network able to predict a set of sensitive component temperatures with a minimized difference during component duty cycle. This work suggests the use of the genetic algorithms fitting technique that turns out relevant for the realization of DCTM, as well as the conventional DELPHI CTM.
  • Keywords
    genetic algorithms; thermal management (packaging); 3D integration technology; DELPHI; chip package; component duty cycle; dynamic compact thermal model; electronic component; genetic algorithm fitting technique; stacked-die component; stacked-die solution; thermal behavioral model; transient regime; Boundary conditions; Capacitance; Genetic algorithms; Heating; Junctions; Thermal resistance; Transient analysis; DELPHI methodology; Dynamic compact thermal model; Genetic Algorithm; Stackeddie; Thermal simulation; Transient;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2012 28th Annual IEEE
  • Conference_Location
    San Jose, CA
  • ISSN
    1065-2221
  • Print_ISBN
    978-1-4673-1110-6
  • Electronic_ISBN
    1065-2221
  • Type

    conf

  • DOI
    10.1109/STHERM.2012.6188821
  • Filename
    6188821