Low Temperature Polycrystalline Silicon Thin Film Transistors Having Titanium Disilicide Source and Drain Contacts

Low-temperature poly-Si TFT´s using titanium disilicide contacts for source and drain have been fabricated. Titanium disilicide was achieved by in-site silicidation using high-temperature magnetron sputtering at 450°C. A TiSi2 resistivity less than 17 , ¿¿-cm can be obtained for both titanium disilicide source and drain. This is because the low resistivity C54-TiSi2 is formed when TiSi2 is sputtered at 450°C followed by 600°C fabrication process. These TFT´s had an on-off current ratio of 6×10⁶ at Vd=6 V and a field-effect mobility of 2.43 cm²/V.s before hydrogenation.