Physics and Technology for MOSFETs at 0.1 micron and Below

No technical surprises are expected in device development of CMOS with L_eff in the 0.1 μm to 0.05 μm regime. Non-stationary effects such as velocity overshoot near the source end of the channel in nMOSFETs, and carrier energy reduction for a given e-field manfest themselves at these channel lengths. However, channel mobility reduction near the source end due to high vertical e-fields, particularly as V_T is kept nearly constant with reduced L_eff, tends to diminish those effects. It is not clear at the present time whether they will have significant technological significance.