New IGBTs and simulation models simplify automotive ignition system design

Author

Donnelly, J. Michael ; Gauen, Kim

Author_Institution

Analogy, Inc., Beaverton, OR, USA

fYear

1993

fDate

20-24 Jun 1993

Firstpage

473

Lastpage

481

Abstract

A new insulated gate bipolar transistor (IGBT) has been developed for automotive ignition system applications. The MGP20-N40CL features a low threshold voltage, an extended safe operating area and integrated protective voltage clamping. The device´s model parameters were entered directly into the IGBT model of the Saber simulator. This model was verified by comparing simulation results with experimental resistive and inductive load switching transients and DC characteristics. An ignition coil and spark plug test set was also characterized, and simulation results match for both normal fire and open secondary conditions. Simulation results are also shown for the critical battery voltage transients of a complete ignition system at engine start-up

Keywords

automotive electronics; circuit analysis computing; electric ignition; insulated gate bipolar transistors; power semiconductor switches; power system transients; semiconductor device models; IGBT; MGP20-N40CL; Saber simulator; automotive ignition system design; battery voltage transients; engine start-up; extended safe operating area; ignition coil test; inductive load switching transients; insulated gate bipolar transistor; integrated protective voltage clamping; low threshold voltage; resistive load switching transients; simulation models; spark plug test; Automotive engineering; Clamps; Coils; Ignition; Insulated gate bipolar transistors; Plugs; Protection; Sparks; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1993. PESC '93 Record., 24th Annual IEEE

Conference_Location

Seattle, WA

Print_ISBN

0-7803-1243-0

Type

conf

DOI

10.1109/PESC.1993.471972

Filename

471972