Title :
Novel 3D electro-thermal robustness optimization approach of super junction power MOSFETs under unclamped inductive switching
Author :
Rhayem, J. ; Wieers, A. ; Vrbicky, A. ; Moens, P. ; Villamor-Baliarda, A. ; Roig, J. ; Vanmeerbeek, P. ; Irace, A. ; Riccio, M. ; Tack, M.
Author_Institution :
ON Semicond. Belgium BVBA, Oudenaarde, Belgium
Abstract :
This paper presents a novel approach to optimize the electro-thermal robustness of a super-junction power MOSFET under unclamped inductive switching (UIS) conditions. The loosely coupled electro-thermal simulation has been used to predict accurately the interaction between the core active device and the termination rings. The simulation results have been validated by the emission microscopy (EMMI) measurements and the transient IR thermography photos.
Keywords :
infrared imaging; power MOSFET; 3D electro-thermal robustness optimization; EMMI measurement; UIS condition; active device; electro-thermal simulation; emission microscopy measurement; super-junction power MOSFET; termination ring; transient IR thermography photo; unclamped inductive switching; Heating; Junctions; MOSFETs; Mathematical model; Robustness; Temperature; Three dimensional displays; Super-junction Power MOSFET; UIS; electro-thermal robustness;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2012 28th Annual IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1110-6
Electronic_ISBN :
1065-2221
DOI :
10.1109/STHERM.2012.6188828
