Low-Frequency Noise and Microwave Noise Parameters in Si/SiGe Heterojunction Bipolar Transistors

Author

Plana, R. ; Kibbel, H. ; Gruhle, A. ; Escotte, L. ; Roux, JP ; Graffeuil, J.

Author_Institution

LAAS, Univ. Paul Sabatier Toulouse, Toulouse, France

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

51

Lastpage

54

Abstract

First results on low-frequency noise (250 Hz-100 kHz) and microwave noise parameters (4 GHz-20 GHz) observed in a microwave Si/SiGe heterojunction bipolar transistors (1 μm × 20 μm) featuring current gain cut-off frequency of 90 GHz and a maximum oscillation frequency of 30 GHz are reported and discussed. All measurements have been performed on wafer using dedicated techniques.

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; silicon; Si-SiGe; current gain cut-off frequency; frequency 250 Hz to 100 kHz; frequency 30 GHz; frequency 4 GHz to 20 GHz; frequency 90 GHz; low-frequency noise parameter; maximum oscillation frequency; microwave heterojunction bipolar transistors; microwave noise parameter; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise generators; Noise level; Noise measurement; Performance evaluation; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435461