Title :
Polysilicon Thin Film Transistor : a Study of some Techniques of Realisation of the Channel Region and of the Gate
Author :
Scheid, E. ; Campo, E. ; Pedroviejo, J.J. ; Naimi, S. ; Sarrabayrouse, G. ; Bielle-Daspet, D.
Author_Institution :
LAAS, Touluose, France
Abstract :
In this work, we show how some combinations of original processes for TFTs elaboration can result in interesting electrical characteristics. The temperature dependence of the field effect mobility shows that both oxidation and Rapid Thermal Annealing (at 750°C) may have detrimental and favourable effects on μη, and that the combination with Low Temperature Annealing (at 600°C) leads to the best values of both the mobility and the threshold voltage.
Keywords :
oxidation; rapid thermal annealing; thin film transistors; TFT elaboration; channel region; electrical characteristics; field effect mobility; low-temperature annealing; oxidation; polysilicon thin film transistor; rapid thermal annealing; temperature 600 degC; temperature 750 degC; temperature dependence; threshold voltage; Amorphous materials; Crystallization; Electron mobility; Insulation; Oxidation; Rapid thermal annealing; Semiconductor films; Silicon; Temperature; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
