Diluted wet oxidation: a novel technique for ultra thin gate oxide formation

Author

Tanabe, Yoshikazu ; Nakatsuka, Yasuhiko ; Sakai, Satoshi ; Miyazaki, Tom ; Nagahama, Toshiaki

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

1997

fDate

6-8 Oct 1997

Abstract

An ultra-pure water vapor generator that is compatible with RTP wet oxidation has been developed to meet the need for high quality gate oxides in deep sub-micron device process. This generator is based on a catalytic surface reaction of hydrogen gas and oxygen gas, and enables a precise control of H₂O/O₂ ratio in the processing gas at any desired percentage. Diluted Wet Oxidation (DWO) utilizes a low H₂O/O₂ ratio precisely controlled by the water vapor generator to obtain a low oxidation rate comparable to dry oxidation, which results in an accurate film thickness while maintaining the film characteristics of wet oxidation

Keywords

catalysis; chemical variables control; flow control; oxidation; rapid thermal processing; thickness control; H₂O; H₂O/O₂ ratio; O₂; RTP wet oxidation; accurate film thickness; catalytic surface reaction; deep submicron device process; diluted wet oxidation; flow control; high quality gate oxides; low oxidation rate; oxide thickness control; precise control; processing gas; torch-type generator; ultrapure water vapor generator; ultrathin gate oxide formation; Character generation; Controllability; Furnaces; Hydrogen; Oxidation; Rapid thermal processing; Stationary state; Temperature; Thickness control; Water;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-3752-2

Type

conf

DOI

10.1109/ISSM.1997.664621

Filename

664621