DocumentCode :
1911972
Title :
Preparation of BaF/sub 2/ thin films for the application to MIS tunnel emitter
Author :
Usami, Kimiyoshi ; Takahashi, Isao ; Kobayashi, Takehiko ; Goto, Tetsu ; Goto, Tetsu
Author_Institution :
The University of Electro-Communications
fYear :
1994
fDate :
24-29 July 1994
Firstpage :
676
Lastpage :
676
Abstract :
Summary form only given. Ultrathin BaF/sub 2/films of less than 20nm thickness were deposited on the n-type Si
Keywords :
Crystallization; Elementary particle vacuum; Semiconductor diodes; Semiconductor films; Sputtering; Substrates; Surface morphology; Thermal resistance; Transistors; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Science and Technology of Synthetic Metals, 1994. ICSM '94. International Conference on
Conference_Location :
Seoul, Korea
Type :
conf
DOI :
10.1109/STSM.1994.836108
Filename :
836108
Link To Document :
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