Title :
Intrinsically switchable bulk acoustic wave resonators based on paraelectric films
Author :
Vorobiev, A. ; Gevorgian, S.
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
The concept of the frequency switching in the composite bulk acoustic wave (BAW) resonators based on the thin films of the paraelectric-phase ferroelectrics is demonstrated experimentally for the first time. The composite BAW resonators based on the Ba0.25Sr0.75TiO3/SrRuO3/Ba0.25Sr0.75TiO3 multilayer structure are fabricated and characterized. It is shown that the resonance frequency of the BAW resonators can be switched more than two times (from 3.6 GHz to 7.7 GHz) by changing polarity of the 5 V dc bias voltage at the one of the ferroelectric layers. The composite BAW resonators performance is analyzed using the theory of the dc field induced piezoelectric effect in the paraelectric-phase ferroelectrics.
Keywords :
acoustic resonators; bulk acoustic wave devices; ferroelectric materials; ferroelectric thin films; Ba0.25Sr0.75TiO3-SrRuO3-Ba0.25Sr0.75TiO3; composite BAW resonators; composite bulk acoustic wave resonators; dc field induced piezoelectric effect; ferroelectric layers; frequency 3.6 GHz to 7.7 GHz; frequency switching; intrinsically switchable bulk acoustic wave resonators; multilayer structure; paraelectric films; paraelectric-phase ferroelectrics; resonance frequency; thin films; voltage 5 V; Acoustic waves; Electrodes; Films; Piezoelectric polarization; Resonant frequency; Switches; Time-frequency analysis; ferroelectric films; film bulk acoustic resonators; frequency control; tunable circuits and devices;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986441
