Title :
Low-Frequency Noise in SOI MOSFETs from Room to Liquid Helium Temperature: Experimental and Numerical Simulation Results
Author :
Jomaah, J. ; Balestra, F. ; Ghibaudo, G.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
The low-frequency noise in SOI MOSFET´s is studied experimentally and by numerical simulations. The behaviors of devices with completely depleted and partially depleted silicon film are investigated for various substrate biases. The importance of volume inversion in thin Si film is underlined. Moreover, the variations of the current noise around the kink is analysed for thin and thick film devices as a function of temperature.
Keywords :
MOSFET; elemental semiconductors; numerical analysis; semiconductor device noise; silicon; silicon-on-insulator; thin film transistors; S; SOI MOSFET; completely-depleted silicon film; experimental study; liquid helium temperature; low-frequency noise; numerical simulation; partially-depleted silicon film; room temperature; substrate biases; thick film devices; thin film devices; thin silicon film; volume inversion; Fluctuations; Helium; Low-frequency noise; MOSFETs; Numerical simulation; Semiconductor films; Silicon on insulator technology; Substrates; Temperature; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
