Title :
Universal Electrical Characteristics and Frequency Limits of the Permeable Base Transistor
Author :
Chenevier, P. ; Kamarinos, G. ; Pananakakis, G.
Author_Institution :
Lab. de Phys. des Composants a Semicond. - LPCS, ENSERG, Grenoble, France
Abstract :
Using only a few numerical calculations, we give the analytical current-voltage and charge-voltage characteristics valid for any PBT. The highest unity current gain frequency (fT) corresponding to the current technology is on the order of 30 GHz; nevertheless, the oscillation frequency can be higher than 100 GHz.
Keywords :
microwave bipolar transistors; millimetre wave bipolar transistors; permeable base transistors; PBT; analytical current-voltage characteristic; charge-voltage characteristic; frequency 30 GHz; frequency limit; numerical calculation; oscillation frequency; permeable base transistor; unity current gain frequency; universal electrical characteristic; Electric variables; Electron mobility; Etching; Frequency; Linear predictive coding; MESFETs; Neodymium; Numerical simulation; Thyristors; Virtual manufacturing;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
