• DocumentCode
    1912224
  • Title

    Universal Electrical Characteristics and Frequency Limits of the Permeable Base Transistor

  • Author

    Chenevier, P. ; Kamarinos, G. ; Pananakakis, G.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond. - LPCS, ENSERG, Grenoble, France
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    121
  • Lastpage
    124
  • Abstract
    Using only a few numerical calculations, we give the analytical current-voltage and charge-voltage characteristics valid for any PBT. The highest unity current gain frequency (fT) corresponding to the current technology is on the order of 30 GHz; nevertheless, the oscillation frequency can be higher than 100 GHz.
  • Keywords
    microwave bipolar transistors; millimetre wave bipolar transistors; permeable base transistors; PBT; analytical current-voltage characteristic; charge-voltage characteristic; frequency 30 GHz; frequency limit; numerical calculation; oscillation frequency; permeable base transistor; unity current gain frequency; universal electrical characteristic; Electric variables; Electron mobility; Etching; Frequency; Linear predictive coding; MESFETs; Neodymium; Numerical simulation; Thyristors; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435475
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1912224