• DocumentCode
    1912316
  • Title

    Two-Step Deposition Method for Improvement of the Electrical Characteristics of BST Thin Films

  • Author

    Kil, D. ; Byung-Il Lee ; Joo, Seung-Ki

  • Author_Institution
    Seoul National University, Korea
  • fYear
    1997
  • fDate
    22-24 Sept. 1997
  • Firstpage
    752
  • Lastpage
    755
  • Abstract
    The characteristics of the BST thin films deposited by two-step deposition process were investigated. A 100 Å thick bottom layer was deposited at 600 C° and then upper main layer was in-situ deposited at 350 C° by rf magnetron co-sputtering, respectively. Two-step deposited BST thin film of 500 Å showed lower lealwge current density of 2 X 10-3A/cm2 at 1.5V and more wide flat region in the low field than those of BST thin film deposited by one step process, and small silicon oxide equivalent thickness of 4.9 Å. With the decrease of film thickness, equivalent oxide thickness which is about 5.4 Å for the film with thickness of 1000 A can be reduced to 4.2 Å for 200 Å.
  • Keywords
    Dielectric constant; Dielectric measurements; Dielectric substrates; Dielectric thin films; Electric variables; Leakage current; Semiconductor thin films; Sputtering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Conference_Location
    Stuttgart, Germany
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194538
  • Filename
    1503468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1912316