Title :
Stress-dependent Oxidation Simulations for Submicron Technologies
Author :
Krivokapic, Zoran ; Liu, Bill
Author_Institution :
Krivokapic Adv. Micro Devices, Sunnyvale, CA, USA
Abstract :
Modeling of advanced isolation techniques for deep submicron technologies is described. Initially, calibration of stress-dependent parameters is done. The latter are used for comparing wet and dry, conventional and poly-buffered LOCOS isolations. Computer simulations were used to optimize isolation process.
Keywords :
calibration; isolation technology; oxidation; advanced isolation technique modeling; computer simulation; deep submicron technology; polybuffered LOCOS isolation process optimization; stress-dependent oxidation simulation; stress-dependent parameter calibration; Calibration; Computational modeling; Computer simulation; Isolation technology; Oxidation; Silicon; Temperature; Tensile stress; Virtual reality; Viscosity;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble