Sensitivity of PNP Doping Profiles to Annealing Conditions - Role of Dynamic Clustering Phenomena

Author

Baccus ; Vandenbossche, E. ; Monroy, A. ; Collard, D. ; Jaouen, H. ; Roche, M.

Author_Institution

IEMN-ISEN, Lille, France

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

167

Lastpage

170

Abstract

It is well-known that doping profiles of PNP transistors are extremely sensitive to the exact annealing conditions, in particular to the ramp-up procedure. This is essentially due to the strong response of boron and phosphorus to transient-enhanced diffusion and the coupling between the two dopants [1]. In this paper, it is shown that for high boron concentration in the emitter, the dynamic behaviour of the boron cluster is responsible for die observed degradation in the base pinched resistance. Moreover, it is possible to minimize these effects by a proper choice of ramp-down conditions.

Keywords

annealing; bipolar transistors; boron; chemical interdiffusion; doping profiles; p-n junctions; phosphorus; PNP transistors; annealing conditions; base pinched resistance; boron cluster; boron concentration; dynamic clustering; phosphorus; pnp doping profiles; ramp-up procedure; transient-enhanced diffusion; Analytical models; Annealing; BiCMOS integrated circuits; Boron; Doping profiles; Microelectronics; Poisson equations; Semiconductor process modeling; Storms; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435485