DocumentCode
1912646
Title
The future of delta IDDQ testing
Author
Kruseman, Bram ; van Veen, Rutger ; Van Kaam, Kees
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
2001
fDate
2001
Firstpage
101
Lastpage
110
Abstract
The increase in off-state current for deep submicron technologies will make conventional IDDQ testing ineffective. An attractive alternative is differential IDDQ or ΔIDDQ testing as a function of the test pattern; it is relatively easy to implement it in a production environment and the method can detect IDDQ anomalies of a few percent of the off-state current itself. In its simplest form the method is limited by state-dependent leakage current variations. More advanced versions of ΔIDDQ testing can cope with these state-dependencies and are useful for off-state currents in the milliampere range. The presence of state-dependent leakage currents can be utilised to detect large passive defects, which are otherwise undetectable with ΔI DDQ. For even higher leak-age currents circuit-specific state-dependencies become the limiting factor and make ΔIDDQ testing ineffective for devices with off-state currents above 100 mA
Keywords
CMOS integrated circuits; VLSI; fault location; integrated circuit testing; leakage currents; production testing; ΔIDDQ testing; 100 mA; CMOS IC testing; IDDQ anomalies detection; deep submicron technologies; delta IDDQ testing; differential IDDQ; large passive defects detection; off-state current; production environment; quiescent current testing; state-dependent leakage current variations; test pattern; CMOS technology; Circuit testing; Costs; Laboratories; Leak detection; Leakage current; MOSFETs; Production; Silicon on insulator technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 2001. Proceedings. International
Conference_Location
Baltimore, MD
ISSN
1089-3539
Print_ISBN
0-7803-7169-0
Type
conf
DOI
10.1109/TEST.2001.966623
Filename
966623
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