DocumentCode
1912733
Title
P mono-/p polysilicon layer: Separation of influences on electron transport and their processing dependences
Author
Hu, Bailin ; Berger, Horst H.
Author_Institution
Inst. of Microelectron., Tech. Univ. of Berlin, Berlin, Germany
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
219
Lastpage
222
Abstract
A new procedure is described to separate the minority carrier current through the monosilicon/interface/polysilicon structure according to the various mechanisms. These mechanisms are then related to various processing conditions for process optimization. For the first time a significant effect of the monosilicon doping on the interface recombination has been identified.
Keywords
current density; minority carriers; semiconductor device testing; semiconductor doping; electron transport; interface recombination; minority carrier current; monosilicon doping; monosilicon-interface-polysilicon structure; polysilicon layer; Annealing; Boron; Diodes; Doping; Electrons; MONOS devices; Microelectronics; Testing; Transistors; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435495
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