• DocumentCode
    1912778
  • Title

    Calculation of a bipolar transistor phase characteristics

  • Author

    Belyaev, I.V. ; Fursaev, M.A.

  • Author_Institution
    Saratov State Tech. Univ., Saratov
  • fYear
    2008
  • fDate
    24-25 Sept. 2008
  • Firstpage
    41
  • Lastpage
    43
  • Abstract
    Calculation method of a bipolar transistor phase characteristics, where transistor operates at current cutoff regime with closed collector transition, is considered. Notion of transistor as an active quadripole with using piecewise quasi-linear model of this device is underlay of this method.
  • Keywords
    bipolar transistors; active quadripole; bipolar transistor phase; collector transition; current cutoff regime; piecewise quasi-linear model; Bipolar transistors; Design automation; Helium; Microwave FETs; Microwave oscillators; Microwave transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electron Devices Engineering, 2008. APEDE '08. International Conference on
  • Conference_Location
    Saratov
  • Print_ISBN
    978-1-4244-2121-3
  • Electronic_ISBN
    978-1-4244-2122-0
  • Type

    conf

  • DOI
    10.1109/APEDE.2008.4720107
  • Filename
    4720107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1912778