Title :
DC and AC Performance of Si and Si/Si(1-x) Ge(x) Bipolar Transistors at Temperatures up to 300 C
Author :
Pohl, M. ; Aufinger, K. ; Böck, J. ; Meister, T.F. ; Philipsborn, H. Von
Author_Institution :
Siemens AG, Munich, Germany
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
