Title :
Investigation of the Temperature Dependence of Threshold Current Density of GaInP/AlGaInP Multi Quantum Well Lasers
Author :
Barth, F. ; Klepser, B. ; Nagel, S. ; Ernst, P. ; Moser, M. ; Scholz, F. ; Schweizer, H.
Author_Institution :
4. Physikahsches Inst., Univ. Stuttgart, Stuttgart, Germany
Abstract :
This paper investigates the temperature dependence of the threshold current density of GalnP/AIGalnP quantum well lasers with strained and unstrained active regions. Experimental data as well as model calculations for the temperature dependence of the radiative recombination rate in the active layer and a carrier transport model for the leakage current are presented.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; quantum well lasers; thermoelectricity; GaInP-AlGaInP; active layer; carrier transport model; leakage current; multiquantum well lasers; radiative recombination rate; strained active regions; temperature dependence; threshold current density; unstrained active regions; Current density; Current measurement; Density measurement; Laser modes; Leakage current; Optical waveguides; Quantum well lasers; Radiative recombination; Temperature dependence; Threshold current;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
