DocumentCode
1913043
Title
Investigation of the Temperature Dependence of Threshold Current Density of GaInP/AlGaInP Multi Quantum Well Lasers
Author
Barth, F. ; Klepser, B. ; Nagel, S. ; Ernst, P. ; Moser, M. ; Scholz, F. ; Schweizer, H.
Author_Institution
4. Physikahsches Inst., Univ. Stuttgart, Stuttgart, Germany
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
283
Lastpage
286
Abstract
This paper investigates the temperature dependence of the threshold current density of GalnP/AIGalnP quantum well lasers with strained and unstrained active regions. Experimental data as well as model calculations for the temperature dependence of the radiative recombination rate in the active layer and a carrier transport model for the leakage current are presented.
Keywords
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; quantum well lasers; thermoelectricity; GaInP-AlGaInP; active layer; carrier transport model; leakage current; multiquantum well lasers; radiative recombination rate; strained active regions; temperature dependence; threshold current density; unstrained active regions; Current density; Current measurement; Density measurement; Laser modes; Leakage current; Optical waveguides; Quantum well lasers; Radiative recombination; Temperature dependence; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435506
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