Title :
GaN HEMT structure modeling and characterization techniques
Author_Institution :
Inst. of Micoelectronics, Peking Univ., Beijing, China
Abstract :
A novel device model has been established for GaN HEMT, featuring polarization induced, positive/ negative charge pairs. Unconventional techniques are found necessary to characterize, and to optimize the design of the polar semiconductor based device for transient (current collapse) free, efficient, microwave power amplification in communication systems.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; GaN; HEMT characterization techniques; HEMT structure modeling; communication systems; microwave power amplification; polar semiconductor based device; polarization induced charge pairs; positive-negative charge pairs; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; HEMTs; MODFETs; Mobile communication; Slabs; GaN HEMT; Polarization induced charge pairs; current collapse; power amplifier;
Conference_Titel :
Wireless Symposium (IWS), 2014 IEEE International
Conference_Location :
X´ian
DOI :
10.1109/IEEE-IWS.2014.6864186
