SOI substrates for More than Moore roadmap

Author

Raskin, Jean-Pierre

Author_Institution

Inst. of Inf. & Commun. Technol., Univ. catholique de Louvain (UCL), Louvain-la-Neuve, Belgium

fYear

2012

fDate

14-17 March 2012

Firstpage

1

Lastpage

4

Abstract

This last decade silicon-on-insulator (SOI) MOSFET technology has demonstrated its potentialities for high frequency (reaching cut-off frequencies close to 500 GHz for nMOSFETs) and for harsh environments (high temperature, radiation) commercial applications. SOI also presents high resistivity substrate capabilities, leading to substantially reduced substrate losses. SOI technology is also emerging as a major contender for heterogeneous microsystems applications. In this work, we demonstrate the advantages of SOI technology for RF CMOS integration as well as for building thin film sensors on thin dielectric membrane and three-dimensional microelectromechanical (MEMS) sensors and actuators co-integrated with their associated SOI CMOS circuitry.

Keywords

MOSFET; silicon-on-insulator; substrates; Moore roadmap; RF CMOS integration; SOI CMOS circuitry; SOI substrates; SOI technology; actuators; heterogeneous microsystem application; high resistivity substrate; silicon-on-insulator MOSFET technology; substrate losses; thin dielectric membrane; thin film sensors; three-dimensional microelectromechanical sensors; CMOS integrated circuits; CMOS technology; Micromechanical devices; Radio frequency; Sensors; Silicon; Substrates; Co-integration SOI CMOS — MEMS; High Resistivity (HR) SOI substrate; MEMS sensors; RF CMOS; Thin-film SOI MEMS; Trap-rich HR SOI substrate; crosstalk;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4577-1116-9

Electronic_ISBN

978-1-4577-1115-2

Type

conf

DOI

10.1109/ICCDCS.2012.6188886

Filename

6188886