Title :
Wideband RF power amplifier to multiband transceivers
Author :
Nascimento de Figueiredo, Tiago ; Manhaes Mosso, Marbey
Author_Institution :
Div. de Eng., IMBEL FMCE, Rio de Janeiro, Brazil
Abstract :
This work describes the design of a wideband RF power amplifier using GaN HEMT. A complete design methodology is developed using the best compromise between efficiency and linearity. All design flux is implemented using Agilent Advanced Design System and Momentum planar electromagnetic simulator. The result is a constructed circuit that closely fulfill with the requirements.
Keywords :
III-V semiconductors; UHF power amplifiers; VHF amplifiers; gallium compounds; high electron mobility transistors; transceivers; wide band gap semiconductors; wideband amplifiers; Agilent Advanced Design System; GaN; GaN HEMT; design methodology; momentum planar electromagnetic simulator; multiband transceivers; wideband RF power amplifier; Gain; Gallium nitride; Linearity; Power amplifiers; Power generation; Radio frequency; Transmission line measurements;
Conference_Titel :
Microwave & Optoelectronics Conference (IMOC), 2013 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
DOI :
10.1109/IMOC.2013.6646419
