Modelling of Anomalous Boron Diffusion in Si/Si1-xGexHBTs

Author

Gregory, H.J. ; Mouis, M. ; Mathiot, D. ; Robbins, D.J. ; Glasper, J. ; Ashburn, P. ; Nigrin, S.

Author_Institution

Dept. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

335

Lastpage

338

Abstract

A comparison is made between measured and simulated boron base doping profiles in Si/Si_1-xGe_x heterojunction bipolar transistors fabricated with an n⁺ emitter contact implant. The non- equilibrium, supersaturation of defects arising from the implant is represented in the simulations by a point defect distribution obtained from Monte Carlo simulation. An enhancement of the boron diffusivity is predicted by the simulations, but not to the extent observed in the measured samples. The implications of these results for the physical modelling of boron diffusion are discussed.

Keywords

Ge-Si alloys; Monte Carlo methods; boron; doping profiles; heterojunction bipolar transistors; impurity distribution; point defects; semiconductor device models; semiconductor doping; HBT; Monte Carlo simulation; Si-Si_1-xGe_x:B; anomalous boron diffusion; bipolar transistor; boron base doping profiles; contact implant; defect nonequilibrium; defect supersaturation; point defect distribution; Analytical models; Boron; Computer science; Doping profiles; Heterojunction bipolar transistors; Implants; Predictive models; Rapid thermal annealing; Simulated annealing; Telecommunications;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435516