DocumentCode
1913415
Title
Structural studies of cubic GaN films grown by MOCVD
Author
Vilchis, H. ; Sánchez-R, V.M. ; Escobosa, A.
Author_Institution
Electr. Eng. Dept., CINVESTA-IPN, Mexico City, Mexico
fYear
2012
fDate
14-17 March 2012
Firstpage
1
Lastpage
3
Abstract
In this work the characterization of cubic GaN epitaxial films on templates obtained by nitridation of GaAs is reported. N- or p-type materials were obtained in Undoped or Mg-doped films respectively. The use of Mg compounds results in a tendency to incorporate the hexagonal phase in the films, but this effect can be avoided adjusting the experimental parameters. The results show that the materials can be suitable to the realization of optoelectronic devices.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; magnesium compounds; nitridation; semiconductor doping; wide band gap semiconductors; GaAs; GaN; MOCVD; Mg; cubic GaN epitaxial film; doped film; n-type material; nitridation; optoelectronic device; p-type material; structural studies; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gallium nitride; Photoluminescence; Substrates; Mg doped; cubic GaN; nitridation;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location
Playa del Carmen
Print_ISBN
978-1-4577-1116-9
Electronic_ISBN
978-1-4577-1115-2
Type
conf
DOI
10.1109/ICCDCS.2012.6188897
Filename
6188897
Link To Document