• DocumentCode
    1913450
  • Title

    Use of Electrothermal Simulation to Analyze Thermal Breakdown on N+/P/P+ Diode During ESD Pulse

  • Author

    Buj, C. ; Leroux, C. ; Chante, J-P.

  • Author_Institution
    CENG, LETI (CEA Technol. Av.), Grenoble, France
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    347
  • Lastpage
    350
  • Abstract
    Electrothermal simulators are efficient tools to study Electrostatic Discharge (ESD) problems. We use the numerical 2D simulator TMA-MEDICI [1] to simulate electrothermal problems. We propose here an analysis of thermal breakdown occurrence observed on a PIN diode under reverse ESD pulse. Experimental studies and analytical models have already been proposed [2,3,4]. Nevertheless, simulations coupled with experimental results allowed the study of the failure mode evolution. This new approach led to a better understanding of the main physical mechanisms involved in thermal breakdown phenomenon.
  • Keywords
    electrostatic discharge; p-i-n diodes; ESD pulse; PIN diode; TMA MEDICI; electrostatic discharge problems; electrothermal simulation; failure mode evolution; thermal breakdown; Analytical models; Biological system modeling; Current supplies; Electric breakdown; Electrostatic discharge; Electrothermal effects; Epitaxial layers; Light emitting diodes; Space charge; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435519