Title :
Low Frequency Noise and Excess Currents Due to Trap-Assisted Tunneling in Double Barrier Resonant Tunneling Diodes
Author_Institution :
P813, MS 014, Northern Telecom, 185 Corkstown Rd, Ottawa, ONT, Canada K2H 8V4; School of Engineering Science, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6
Abstract :
Low frequency noise and excess currents in InP and GaAs-based double barrier (DB) resonant tunneling diodes (RTDs) are described. Correlations between noise measurements and static characteristics of the DB RTDs, and a theoretical explanation for both noise and d.c. characteristics based on trap-assisted tunneling (TAT) is presented. It is shown that devices with low peak-to-valley current ratios (PVCRs) have generation-recombination (g-r), flicker and shot noise present in their noise spectra, but devices with higher PVCRs, on the other hand, have only flicker and shot noise spectra.
Keywords :
III-V semiconductors; flicker noise; gallium arsenide; indium compounds; resonant tunnelling diodes; semiconductor device noise; shot noise; DB RTD; DC characteristic; InP-GaAs; TAT; double barrier resonant tunneling diode; excess current; flicker noise spectra; generation-recombination; low PVCR; low frequency noise; low peak-to-valley current ratio; shot noise spectra; trap-assisted tunneling; 1f noise; Circuit noise; Diodes; Low-frequency noise; Noise measurement; Noise shaping; Optical noise; Resonant tunneling devices; Semiconductor device noise; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
