DocumentCode :
1913525
Title :
Practical application of energy consumption ratio test
Author :
Peterson, Eric ; Jiang, Wanli
Author_Institution :
Test Eng., Guidant Corp., St. Paul, MN, USA
fYear :
2001
fDate :
2001
Firstpage :
386
Lastpage :
394
Abstract :
Dynamic Idd test techniques are obtaining more attention from both academia and industry, because of their ability to further improve product quality beyond tests based primarily on Iddq test and other traditional test techniques. Normal process variations in wafer fabrication decrease the defect coverage and affect the application of dynamic Idd test techniques. Energy Consumption Ratio (ECR) test, a recent test metric based on dynamic currents, shows its tolerance to process variations, over other dynamic test techniques. We investigate this technique as a method of providing additional test coverage to production wafers that were fabricated using two different planarization technologies. One set was fabricated with a Spin-on-Glass (SOG) planarization technology, and the other set with Chemical Mechanical Polishing (CMP). The SOG wafers used in our experiments contain defects known as "poisoned vias." We show that the ECR is effective in detecting defects of this type where other traditional test methods are not
Keywords :
chemical mechanical polishing; integrated circuit manufacture; integrated circuit testing; production testing; surface treatment; CMP; SOG technology; chemical mechanical polishing; defects detection; dynamic Idd test techniques; dynamic currents; energy consumption ratio test; planarization technologies; poisoned vias detection; process variations tolerance; production wafers; spin-on-glass technology; test coverage; test metric; Chemical technology; Circuit faults; Circuit testing; Current measurement; Energy consumption; Planarization; Power measurement; Production; Transient analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference, 2001. Proceedings. International
Conference_Location :
Baltimore, MD
ISSN :
1089-3539
Print_ISBN :
0-7803-7169-0
Type :
conf
DOI :
10.1109/TEST.2001.966655
Filename :
966655
Link To Document :
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