2D Numerical Investigation of Gate Structure, Band Alignment and Delta-Doping Effects on the Transconductance and Cutoff Frequency of Submicron Si/SiGe FET´s

Author

Voinigescu, S.P. ; Rabkin, P.B. ; Salama, C.A.T. ; Blakey, P.A.

Author_Institution

Dept. of Elec. & Comp. Eng., Univ. of Toronto, Toronto, ON, Canada

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

361

Lastpage

364

Abstract

The behavior of several innovative submicrometer Si/SiGe FET variants is characterized using 2D numerical simulation. The behavior that is investigated includes transconductance, cutoff frequency, subthreshold and breakdown characteristics. The benefits of graded Ge doping in the channel is clearly demonstrated. MOS gated devices are predicted to have transconductances and cutoff frequencies about 25% higher than Schottky gated devices.

Keywords

Ge-Si alloys; MOSFET; Schottky gate field effect transistors; elemental semiconductors; numerical analysis; semiconductor doping; silicon; 2D numerical simulation; MOS gated devices; Schottky gated devices; Si-SiGe; band alignment; breakdown characteristic; cutoff frequency; delta-doping effects; gate structure; graded germanium doping; submicron FET; subthreshold characteristic; transconductance; Cutoff frequency; FETs; Germanium silicon alloys; HEMTs; MODFETs; MOSFET circuits; Silicon germanium; Temperature; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435522