• DocumentCode
    1913580
  • Title

    p-MOSFETs and MODFETs with a strained Si1-xGex channel layer

  • Author

    Reader, A.H. ; Colak, S. ; Montree, A.H. ; Kersten, W.J. ; Gravesteijn, D.J.

  • Author_Institution
    Philips Res. Labs., Eindhoven, Netherlands
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    365
  • Lastpage
    368
  • Abstract
    Si1-xGex channel p-MOSFETs and MODFETs containing Ge fractions from x=0 to 1.0 have been fabricated in material grown at 550°C. An improved carrier mobility was recorded for a Si0.8Ge0.2 device over that for a control MOSFET fabricated in Si also grown at this low temperature. It is argued that this growth temperature is responsible for the low absolute values of mobility recorded in these devices.
  • Keywords
    Ge-Si alloys; MOSFET; carrier mobility; high electron mobility transistors; Ge fractions; MODFET; Si1-xGex; carrier mobility; control MOSFET; p-MOSFET; strained channel layer; temperature 550 degC; Annealing; CMOS integrated circuits; Epitaxial layers; HEMTs; MODFETs; MOSFET circuits; Strain control; Substrates; Temperature control; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1913580