• DocumentCode
    1913582
  • Title

    Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs

  • Author

    Bühler, R.T. ; Martino, J.A. ; Agopian, P.G.D. ; Giacomini, R.

  • Author_Institution
    LSI, Univ. of Sao Paulo, São Paulo, Brazil
  • fYear
    2012
  • fDate
    14-17 March 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This work analyzes the fin width dependence on induced uniaxial stress on n-type MuGFETs thought 3D simulations. A study on the stress distribution and the electric characterization of the device to measure the impact on its performance is accomplished. The stress distribution and the device performance exhibited dependence on the fin width, with higher stress transfer for narrower fins resulting in better electrical performance.
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; 3D simulation; electric characterization; fin width influence; n-type MuGFET; stress distribution; stress transfer; triple-gate SOI nMOSFET; uniaxial stress; Degradation; Gain; Logic gates; Performance evaluation; Silicon; Stress; Transconductance; SOI MuGFET; Uniaxial Stress Profiles; fin width;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
  • Conference_Location
    Playa del Carmen
  • Print_ISBN
    978-1-4577-1116-9
  • Electronic_ISBN
    978-1-4577-1115-2
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2012.6188901
  • Filename
    6188901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1913582