Title :
Fin width influence on uniaxial stress of triple-gate SOI nMOSFETs
Author :
Bühler, R.T. ; Martino, J.A. ; Agopian, P.G.D. ; Giacomini, R.
Author_Institution :
LSI, Univ. of Sao Paulo, São Paulo, Brazil
Abstract :
This work analyzes the fin width dependence on induced uniaxial stress on n-type MuGFETs thought 3D simulations. A study on the stress distribution and the electric characterization of the device to measure the impact on its performance is accomplished. The stress distribution and the device performance exhibited dependence on the fin width, with higher stress transfer for narrower fins resulting in better electrical performance.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; 3D simulation; electric characterization; fin width influence; n-type MuGFET; stress distribution; stress transfer; triple-gate SOI nMOSFET; uniaxial stress; Degradation; Gain; Logic gates; Performance evaluation; Silicon; Stress; Transconductance; SOI MuGFET; Uniaxial Stress Profiles; fin width;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188901
