Title :
Identification of the optimum operation for GaN HEMTs in high-power amplifiers
Author :
Bosi, Gianni ; Raffo, Antonio ; Vadala, Valeria ; Nalli, Andrea ; Vannini, Giorgio
Author_Institution :
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
Abstract :
In this paper, a technique for the prediction of the optimum performance operation of GaN transistors is described. It is based on a small set of low-frequency measurements to acquire the I/V dynamic behavior of the device and a “partial” model to consider the strictly nonlinear dynamic effects of the device. The technique is applied and validated on a 0.5-8×250-μm2 GaN HEMT at 5.5 GHz.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave power amplifiers; semiconductor device models; wide band gap semiconductors; GaN; GaN HEMT; I/V dynamic behavior; frequency 5.5 GHz; high-power amplifiers; low-frequency measurements; nonlinear dynamic effects; optimum operation; Frequency measurement; Gallium nitride; HEMTs; Impedance; MODFETs; Power generation; Radio frequency; load-pull; microwave amplifiers; semiconductor device measurements; semiconductor device modeling;
Conference_Titel :
Microwave & Optoelectronics Conference (IMOC), 2013 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
DOI :
10.1109/IMOC.2013.6646425
