DocumentCode
191361
Title
A compact wideband high power amplifier in GaN technology with 47% peak PAE
Author
Dupuy, Victor ; Deltimple, Nathalie ; Kerherve, Eric ; Plaze, Jean-Philippe ; Mancuso, Y. ; Garrec, P. ; Dematos, Magali ; Aloui, S.
Author_Institution
IMS Lab., Univ. of Bordeaux, Talence, France
fYear
2014
fDate
24-26 March 2014
Firstpage
1
Lastpage
4
Abstract
This article presents a 4-6GHz power amplifier in a 0.25μm GaN integrated technology from UMS foundry. Two unit power cells are combined to increase output power. A new power combiner based on a stacked balun is presented. It has the advantage of occupying a much smaller area than a conventional one. The measured circuit exhibits a peak output power of 37 dBm together with a peak PAE of 47% at 4GHz.
Keywords
III-V semiconductors; MMIC power amplifiers; baluns; field effect MMIC; gallium compounds; power combiners; wide band gap semiconductors; GaN; PAE; UMS foundry; compact wideband high power amplifier; frequency 4 GHz to 6 GHz; power added efficiency; power combiner; size 0.25 mum; stacked balun; unit power cells; Gallium nitride; Impedance matching; MMICs; Power amplifiers; Power combiners; Power generation; Power measurement; GaN. High power amplifier (HPA); power combining; vertically stacked balun;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Symposium (IWS), 2014 IEEE International
Conference_Location
X´ian
Type
conf
DOI
10.1109/IEEE-IWS.2014.6864211
Filename
6864211
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