Dark Current Characterization in CCD´s

To investigate the nature of dark current in CCD´s many test structures have been made. All of them have the disadvantage that they do not represent the sensor close enough to extract the relevant dark current parameters. To avoid this the sensor itself has been used as a test structure. DC measurements of dark current versus gate voltage have been taken. With an additional conductive glue layer on the image section we have determined the influence of the window in the polysilicon gates with respect to the dark current. By pulsing the gates the bulk and interface contribution has been found.