DocumentCode
1913649
Title
A High Density Multi-Bit/Analog DRAM Cell
Author
Kim, Wonchan ; Kih, Joongsik ; Kim, Gyudong ; Jung, Sanghun ; Ahn, Gijung ; Oh, Kye Hwan
Author_Institution
Dept. of Electron. Eng., Seoul Nat. Univ., Seoul, South Korea
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
377
Lastpage
380
Abstract
A new two-transistor memory cell concept for 16-Mbit DRAM and beyond is described. This cell offers the advantages of small cell size, non-destructive and fast operation of reading with a built-in amplifier, and the capability of storing multiple-valued or analog information.
Keywords
DRAM chips; amplifiers; analogue circuits; analog DRAM cell; analog information; built-in amplifier; high density multibit DRAM cell; multiple-valued information; nondestructive operation; small cell size; storage capacity 16 Mbit; two-transistor memory cell; Capacitance; Capacitors; Electrodes; Joining processes; Operational amplifiers; Random access memory; Research and development; Thin film transistors; Threshold voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435526
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