The impact of back bias on the floating body effect in UTBOX SOI devices for 1T-FBRAM memory applications

In this paper, the floating body effect used in one Transistor Floating Body Random Access Memory (1T-FBRAM) is experimentally investigated on Fully Depleted Ultra Thin Box Silicon On Insulator devices (FD UTBOX SOI). It is shown that using a positive back bias allows further scaling of 1T-FBRAM by increasing the current sense margin as well as the V_G read window. Furthermore, the V_D operating bias is reduced to the minimal drain voltage needed for impact ionization, which is beneficial for reliability.