Title :
Thermal Oxidation of Lightly- and Heavily-Doped Silicon in Pure N2O
Author :
Sun, S.C. ; Chang, H.Y.
Author_Institution :
Nat. Nano Device Lab., Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The growth of silicon dioxide in pure N2O has been evaluated by using conventional furnace oxidation method. The results have pointed out that neither lightly-doped nor heavily-doped substrates exhibit any self-limited growth behavior. The growth kinetics can be described by the linear-parabolic model. Enhanced oxidation has also been observed on heavily arsenic doped substrates in the pure N2O ambient.
Keywords :
arsenic; boron; elemental semiconductors; furnaces; heavily doped semiconductors; oxidation; silicon; silicon compounds; thin films; Si:As; Si:B; SiO2; enhanced oxidation; furnace oxidation method; growth kinetics; heavily arsenic doped substrates; heavily-doped silicon; heavily-doped substrate; lightly-doped silicon; lightly-doped substrate; linear-parabolic model; self-limited growth behavior; silicon dioxide growth; thermal oxidation; Argon; Dielectric substrates; Furnaces; Kinetic theory; Moisture; Oxidation; Rapid thermal processing; Silicon compounds; Sun; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
