• DocumentCode
    1913800
  • Title

    Comparison of RTP N2O-and NH3-Nitrided Thin SiO2 Films

  • Author

    Bouvet, D. ; Novkovski, N. ; Mi, J. ; Letourneau, P. ; Dutoit, M. ; Pio, F. ; Riva, C. ; Bellafiore, N.

  • Author_Institution
    Swiss Fed. Inst. of Technol., Lausanne, Switzerland
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    407
  • Lastpage
    410
  • Abstract
    Thin SiO2 films nitrided by rapid thermal processing in N2O and NH3 are compared. The effect of nitrogen on growth kinetics, composition and electrical characteristics is determined.
  • Keywords
    nitridation; rapid thermal processing; silicon compounds; surface hardening; thin films; RTP nitrided thin silica films; SiO2; electrical characteristics; growth kinetics; rapid thermal processing; Annealing; Kinetic theory; Mass spectroscopy; Microelectronics; Monitoring; Nitrogen; Rapid thermal processing; Research and development; Temperature; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1913800