• DocumentCode
    1913889
  • Title

    Pulsed Drain Current : A Highly Sensitive Technique for Interface Characterization in VLSI MOSFET´s

  • Author

    Haddara, H.

  • Author_Institution
    Electron. & Commun. Eng. Dept., Ain-Shams Univ., Cairo, Egypt
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    425
  • Lastpage
    428
  • Abstract
    This paper presents a new highly sensitive technique for interface characterization in VLSI MOSFET´s. The technique appears to be very promising for future generations of devices as its sensitivity increases with decreasing device dimensions. Our results show that it can detect trap densities as low as a few 109 eV-1 cm-2. Moreover, this sensitivity can be further enhanced by operating at liquid nitrogen temperature.
  • Keywords
    MOSFET; VLSI; nitrogen; VLSI MOSFET; interface characterization; liquid nitrogen temperature; pulsed drain current; Capacitance; Current measurement; Electron traps; Frequency; Integral equations; Nitrogen; Pulse measurements; Temperature sensors; Time factors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1913889