DocumentCode
1913948
Title
A Compact Method for Measuring Parasitic Resistances in Bipolar Transistors
Author
Verzellesi, G. ; Chantre, A. ; Turetta, R. ; Cappellin, M. ; Pavan, P. ; Zanoni, E.
Author_Institution
DEI, Univ. di Padova, Padova, Italy
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
433
Lastpage
436
Abstract
We present a compact experimental technique for the extraction of all parasitic series resistances of bipolar transistor, which requires only few DC measurements and no special device structure. The method is based upon the fact that, due to impact ionization within the base-collector space-charge region, at a certain collector-base voltage the base current and therefore the voltage drop on the parasitic base resistance are reduced to zero.
Keywords
bipolar transistors; electric potential; electric resistance measurement; impact ionisation; DC measurement; base current; base-collector space-charge region; bipolar transistor; collector-base voltage; impact ionization; parasitic base resistance measurement; parasitic series resistance extraction; voltage drop; Area measurement; Bipolar transistors; Current measurement; Electrical resistance measurement; Equations; Equivalent circuits; Impact ionization; Stress measurement; Telecommunications; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435538
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