Title :
A Compact Method for Measuring Parasitic Resistances in Bipolar Transistors
Author :
Verzellesi, G. ; Chantre, A. ; Turetta, R. ; Cappellin, M. ; Pavan, P. ; Zanoni, E.
Author_Institution :
DEI, Univ. di Padova, Padova, Italy
Abstract :
We present a compact experimental technique for the extraction of all parasitic series resistances of bipolar transistor, which requires only few DC measurements and no special device structure. The method is based upon the fact that, due to impact ionization within the base-collector space-charge region, at a certain collector-base voltage the base current and therefore the voltage drop on the parasitic base resistance are reduced to zero.
Keywords :
bipolar transistors; electric potential; electric resistance measurement; impact ionisation; DC measurement; base current; base-collector space-charge region; bipolar transistor; collector-base voltage; impact ionization; parasitic base resistance measurement; parasitic series resistance extraction; voltage drop; Area measurement; Bipolar transistors; Current measurement; Electrical resistance measurement; Equations; Equivalent circuits; Impact ionization; Stress measurement; Telecommunications; Voltage measurement;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
