Impact of temperature on the impedance of microwave and RF PIN diodes

Author

Caverly, Robert H.

Author_Institution

ECE Dept., Villanova Univ., Villanova, PA, USA

fYear

2014

fDate

24-26 March 2014

Firstpage

1

Lastpage

4

Abstract

A closed form linear electrothermal model for the PIN diode showing it frequency and temperature behavior is presented. The model uses PIN diode electrical parameters such as DC forward current, I-region thickness and the temperature-dependent mobility and carrier lifetime as parameters. Impedance behavior is shown over frequency and temperature as examples of the mathematical model and the model is verified with experimental. Good agreement is seen between the model and measured data. The results show that the forward bias impedance is strongly dependent on the carrier lifetime temperature coefficient that has been shown to be a function of diode cross-section and surface passivation.

Keywords

carrier lifetime; microwave diodes; p-i-n diodes; semiconductor device models; DC forward current; I-region thickness; PIN diode electrical parameters; RF PIN diodes; carrier lifetime; carrier lifetime temperature coefficient; diode cross-section function; forward bias impedance; frequency behavior; impedance behavior; linear electrothermal model; mathematical model; microwave diodes; surface passivation; temperature behavior; temperature-dependent mobility; Charge carrier lifetime; Impedance; Mathematical model; PIN photodiodes; Resistance; Temperature dependence; Temperature measurement; linear circuits; nonlinear distortion; p-i-n diodes; semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2014 IEEE International

Conference_Location

X´ian

Type

conf

DOI

10.1109/IEEE-IWS.2014.6864228

Filename

6864228