DocumentCode
1914009
Title
InP Channel HFETs with High Breakdown Voltage and Low Channel Noise
Author
Naït-Zerrad, K. ; Post, G. ; Balestra, F.
Author_Institution
Lab. de Bagneux, FRANCE TELECOM, Bagneux, France
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
443
Lastpage
446
Abstract
We present here the characteristics of InP channel AlInAs barrier heterostructure FETs which show high drain breakdown voltage, very low gate leakage current and low noise at low and intermediate frequencies.
Keywords
III-V semiconductors; aluminium compounds; electric breakdown; high electron mobility transistors; indium compounds; leakage currents; AlInAs; HFET; InP; heterostructure FET; high breakdown voltage; low channel noise; very low gate leakage current; Breakdown voltage; Buffer layers; Current measurement; Fabrication; Frequency; HEMTs; Indium phosphide; Leakage current; MODFETs; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435540
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