DC Characterization and Low-Frequency Noise in δ-, Pulse- and Uniformly-doped GaAs/AIGaAs MODFETs

Author

Shi, Z.M. ; Py, M.A. ; Bühlmann, H.J. ; Ilegems, M.

Author_Institution

Swiss Fed. Inst. of Technol., Lausanne, Switzerland

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

447

Lastpage

450

Abstract

We present a comparative study, at 300 K and at low longitudinal field, of the DC characteristics and the low-frequency noise in the drain current of GaAs/AlGaAs MODFETs which, ideally, differ only by the doping mode of the AlGaAs layer. The higher 1/f-like noise in the δ-doped structure is consistent with our previous suggestion that charge fluctuations under the gate contribute significantly to the 1/f-like noise. This work further indicates that the charge centers are related to the Si dopants under the gate.

Keywords

1/f noise; III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device noise; semiconductor doping; 1/f-like noise; DC characteristics; GaAs-AlGaAs:Si; d-doped MODFET; doping mode; drain current; low frequency noise; low longitudinal field; pulse doped MODFET; temperature 300 K; uniformly doped MODFET; Doping; Fluctuations; Gallium arsenide; Gold; HEMTs; Intrusion detection; Low-frequency noise; MODFETs; Noise measurement; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435541