Title :
Current transient spectroscopy on AlInAs/GaAlInAs heterojunction field effect transistors
Author :
Ababou, S. ; Ducroquet, F. ; Guillot, G. ; Berthier, Ph ; Giraudet, L. ; Praseuth, J.P.
Author_Institution :
Laboratoirc de Phys. de la Mater., INSA de Lyon, Villeurbanne, France
Abstract :
Current transient spectroscopy measurements have been applied to characterize deep levels lying in AlInAs/GaAlInAs/AlInAs heterojunction field effect transistors (HFET). The use of various bias conditions (gate to source voltage as well as drain to source voltage) allows the observation of deep levels lying in the different layers of the HFET. The trap characteristics are compared to the defects observed on Schottky diodes made on thick epilayers of the same materials.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; indium compounds; AlInAs-GaAlInAs-AlInAs; HFET; Schottky diodes; bias conditions; current transient spectroscopy measurements; drain-source voltage; gate-source voltage; heterojunction field effect transistors; material epilayers; trap characteristics; Capacitance measurement; Current measurement; Electron traps; FETs; HEMTs; Heterojunctions; Indium phosphide; Intrusion detection; MODFETs; Spectroscopy;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
